www.DataSheet4U.com
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transist...
www.DataSheet4U.com
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D K
D S S G
1 2 3 4
8 7 6 5
K A A A G S A
TSSOP-8
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current
B
MOSFET -30 ±12 -4.2 -3.5 -30
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
C A B
TA=70°C TA=25°C TA=70°C
IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.4 1 -55 to 150 Typ 73 96 63 75 97 63
30 3 2 40 1.4 1 -55 to 150 Max 90 125 75 90 125 75
V A
W °C Units °C/W
Steady-State Steady-State t ≤ 10s Steady-State Steady-State
Maximum Junction-to-Lead Thermal Characteristics
Schottky Maximum Junction-to-Ambient Maximum Junction-to-Amb...