Effect Transistor. AO8701 Datasheet

AO8701 Transistor. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AO8701
www.DataSheet4U.com
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO8701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
Features
VDS (V) = -30V
ID = -4.2A
RDS(ON) < 50m(VGS = 10V)
RDS(ON) < 65m(VGS = 4.5V)
RDS(ON) < 120m(VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1
S2
S3
G4
8K
7A
6A
5A
TSSOP-8
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
Schottky
30
3
2
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.


AO8701 Datasheet
Recommendation AO8701 Datasheet
Part AO8701
Description P-Channel Enhancement Mode Field Effect Transistor
Feature AO8701; www.DataSheet4U.com Rev 1: Oct 2004 AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode F.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8701 Datasheet




Alpha & Omega Semiconductors AO8701
AO8701, AO8701L
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-4.2A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
Irm Maximum reverse leakage current
CT Junction Capacitance
IF=1.0A
VR=30V
VR=30V, TJ=125°C
VR=30V, TJ=150°C
VR=15V
Min
-30
-0.7
-25
7
Typ Max Units
-1
-5
±100
-1 -1.3
43
54
82
11
-0.75
50
75
65
120
-1
-2.2
V
µA
nA
V
A
m
m
m
S
V
A
954 pF
115 pF
77 pF
6.1
9.4
2
3
6.3
3.2
38.2
12
20.2
11.2
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.45
0.007
3.2
12
37
0.5
0.05
10
20
V
mA
pF
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO8701
AO8701, AO8701L
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
15
-4.5V
-3V
10
8
6
-2.5V
10 4
5
VGS=-2V
2
VDS=-5V
125°C
25°C
0
0
120
1234
-VDS (Volts)
Fig 1: On-Region Characteristics
5
100
VGS=-2.5V
80
60 VGS=-4.5V
40
VGS=-10V
20
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
0
1.6
1.4
0.5 1 1.5 2 2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
ID=-5A
VGS=-4.5V
VGS=-10V
3
1.2 VGS=-2.5V
ID=-2A
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
190 1.0E+01
170 1.0E+00
150
ID=-2A
1.0E-01
130 125°C
110 1.0E-02
90
125°C
1.0E-03
70
1.0E-04
25°C
50 25°C
30
1.0E-05
THIS PRO1D0UCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONS1U.0MEE-0R6 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENT0S IN LIFE2SUPPOR4T DEVICE6S OR SYS8TEMS AR1E0 NOT AUTHORIZ0E.0D. AO0S.2DOES0N.4OT AS0S.6UME A0N.8Y LIA1B.I0LITY A1R.2ISING
OUT OF SUCH APPLICATIONS O-VRGUS S(VEoSltOs)F ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMP-RVSODV(EVoPltRsO) DUCT DESIGN,
FUNCTIONS AFiNgDurReE5L:IOABn-ILRIeTsYisWtaInTcHeOvUsT. GNaOtTeI-CSEou. rce Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.







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