AO8701 Datasheet PDF Download, Alpha & Omega Semiconductors





(PDF) AO8701 Datasheet Download

Part Number AO8701
Description P-Channel Enhancement Mode Field Effect Transistor
Manufacture Alpha & Omega Semiconductors
Total Page 5 Pages
PDF Download Download AO8701 Datasheet PDF

Features: www.DataSheet4U.com Rev 1: Oct 2004 AO 8701, AO8701L ( Green Product ) P-Chann el Enhancement Mode Field Effect Transi stor with Schottky Diode General Descri ption The AO8701 uses advanced trench t echnology to provide excellent RDS(ON) and low gate charge. A Schottky diode i s provided to facilitate the implementa tion of a bidirectional blocking switch . AO8701L ( Green Product ) is offered in a lead-free package. Features VDS ( V) = -30V ID = -4.2A RDS(ON) < 50mΩ ( VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V ) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTT KY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D K D S S G 1 2 3 4 8 7 6 5 K A A A G S A TSSOP-8 Absolute Maximum Rating s T A=25°C unless otherwise noted Para meter Symbol VDS Drain-Source Voltage G ate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±12 -4.2 -3.5 -30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Co ntinuous Forward Current Pulsed Forward Current Power Dissipation Junction.

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www.DataSheet4U.com
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO8701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
Features
VDS (V) = -30V
ID = -4.2A
RDS(ON) < 50m(VGS = 10V)
RDS(ON) < 65m(VGS = 4.5V)
RDS(ON) < 120m(VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1
S2
S3
G4
8K
7A
6A
5A
TSSOP-8
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
Schottky
30
3
2
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

              






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