AO8701L

www.DataSheet4U.com Rev 1: Oct 2004 AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D K D S S G 1 2 3 4 8 7 6 5 K A A A G S A TSSOP-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±12 -4.2 -3.5 -30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.4 1 -55 to 150 Typ 73 96 63 75 97 63 30 3 2 40 1.4 1 -55 to 150 Max 90 125 75 90 125 75 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Amb...