AO8801 Datasheet PDF Download, Alpha & Omega Semiconductors





(PDF) AO8801 Datasheet Download

Part Number AO8801
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Manufacture Alpha & Omega Semiconductors
Total Page 4 Pages
PDF Download Download AO8801 Datasheet PDF

Features: www.DataSheet4U.com AO8801 Dual P-Chann el Enhancement Mode Field Effect Transi stor General Description The AO8801 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications . It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 25 9 specifications). AO8801L is a Green P roduct ordering option. AO8801 and AO88 01L are electrically identical. Featur es VDS (V) = -20V ID = -4.7 A (V GS = - 4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RD S(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Sour ce Voltage Continuous Drain Current A P ulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=2.

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AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
Features
VDS (V) = -20V
ID = -4.7 A (VGS = -4.5V)
RDS(ON) < 42m(VGS = -4.5V)
RDS(ON) < 53m(VGS = -2.5V)
RDS(ON) < 70m(VGS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-4.7
-3.7
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

           






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