Effect Transistor. AO8801 Datasheet

AO8801 Transistor. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AO8801
www.DataSheet4U.com
AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
Features
VDS (V) = -20V
ID = -4.7 A (VGS = -4.5V)
RDS(ON) < 42m(VGS = -4.5V)
RDS(ON) < 53m(VGS = -2.5V)
RDS(ON) < 70m(VGS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-4.7
-3.7
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.


AO8801 Datasheet
Recommendation AO8801 Datasheet
Part AO8801
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Feature AO8801; www.DataSheet4U.com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Descript.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8801 Datasheet




Alpha & Omega Semiconductors AO8801
AO8801
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4.7A
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-4.7A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On Delay Time
tr Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=2.5,
tD(off)
Turn-Off Delay Time
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min
-20
-0.3
-25
8
Typ
-0.55
35
47
44
54
16
-0.78
1450
205
160
6.5
17.2
1.3
4.5
9.5
17
94
35
31
13.8
Max Units
V
-1
-5
µA
±1 µA
±10 µA
-1
A
42
57
m
53 m
70 m
S
-1 V
-2.2 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO8801
AO8801
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-8V
20
15
-4.5V
-3.0V
-2.5V
-2.0V
10
VDS=-5V
8
6
10 4
VGS=-1.5V
52
125°C
25°C
0
0
80
60
40
1234
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-1.8V
VGS=-2.5V
5
VGS=-4.5V
20
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
0
1.6
1.4
1.2
1.0
0.5 1 1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
2
ID=-4.7A, VGS=-2.5V
ID=-2A, VGS=-1.8V
ID=-4.7A, VGS=-4.5V
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
100
90
80 ID=-4.7A
70
60
50 125°C
40 25°C
30
20
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01
1E+00
125°C
1E-01
1E-02
25°C
1E-03
1E-04
1E-05
1E-06
0.0
0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
Alpha & Omega Semiconductor, Ltd.







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