AO8803 Datasheet PDF Download, Alpha & Omega Semiconductors





(PDF) AO8803 Datasheet Download

Part Number AO8803
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Manufacture Alpha & Omega Semiconductors
Total Page 4 Pages
PDF Download Download AO8803 Datasheet PDF

Features: www.DataSheet4U.com AO8803 Dual P-Chann el Enhancement Mode Field Effect Transi stor General Description The AO8803 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications . It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 2 59 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8 803L are electrically identical. Featu res VDS (V) = -12V ID = -7 A (VGS = -4. 5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS( ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29 mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unle ss otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source V oltage Continuous Drain Current A Pulse d Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.8 -20 1.4 0.9 -55 to 150 Units V V A TA=25°C TA.

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AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Features
VDS (V) = -12V
ID = -7 A (VGS = -4.5V)
RDS(ON) < 18m(VGS = -4.5V)
RDS(ON) < 22m(VGS = -2.5V)
RDS(ON) < 29m(VGS = -1.8V)
ESD Rating: 4KV HBM
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-12
±8
-7
-5.8
-20
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

           






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