Effect Transistor. AO8803 Datasheet

AO8803 Transistor. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AO8803
www.DataSheet4U.com
AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Features
VDS (V) = -12V
ID = -7 A (VGS = -4.5V)
RDS(ON) < 18m(VGS = -4.5V)
RDS(ON) < 22m(VGS = -2.5V)
RDS(ON) < 29m(VGS = -1.8V)
ESD Rating: 4KV HBM
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-12
±8
-7
-5.8
-20
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.


AO8803 Datasheet
Recommendation AO8803 Datasheet
Part AO8803
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Feature AO8803; www.DataSheet4U.com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Descript.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8803 Datasheet




Alpha & Omega Semiconductors AO8803
AO8803
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-9.6V, VGS=0V
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-7A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-6A
VGS=-1.8V, ID=-5A
VGS=-1.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-7A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-6V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On Delay Time
tr Turn-On Rise Time
tD(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-4.5V, VDS=-6V, ID=-7A
VGS=-4.5V, VDS=-6V, RL=0.86,
RGEN=3
IF=-7A, dI/dt=100A/µs
IF=-7A, dI/dt=100A/µs
Min
-12
-0.3
-20
Typ Max Units
-0.55
-1
-5
±1
±10
-1
15
19
18
22
28
34
-0.78
18
23
22
29
-1
-2.5
V
µA
µA
µA
A
m
m
m
m
S
V
A
3960
910
757
6.9
4750
8.5
pF
pF
pF
36.6
3.4
10
15
43
158
95
49
19.4
44
60
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : September 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO8803
AO8803
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-8V
20 -3.0V
15 -2.0V
10
5
-1.5V
VGS=-1.0V
10
VDS=-5V
8
6
4
2
125°C
25°C
0
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
0
0.2
0.4 0.6 0.8 1 1.2
-VGS(Volts)
Figure 2: Transfer Characteristics
30 1.6
ID=-6A, VGS=-2.5V
25
VGS=-1.8V
1.4 ID=-5A, VGS=-1.8V
1.4
20 VGS=-2.5V
15
VGS=-4.5V
10
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40 ID=-7A
35
30
25
20
15 25°C
125°C
10
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.2 ID=-7A, VGS=-4.5V
1.0
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1E+01
1E+00
125°C
1E-01
1E-02
25°C
1E-03
1E-04
1E-05
0.0
0.2 0.4 0.6 0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)