Effect Transistor. AO8808 Datasheet

AO8808 Transistor. Datasheet pdf. Equivalent

Part AO8808
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature www.DataSheet4U.com AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor General Descript.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO8808
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AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a Green
Product ordering option. AO8808 and AO8808L are electrically
identical.
Features
VDS (V) = 20V
ID = 8A (VGS = 10V)
RDS(ON) < 14m(VGS = 10V)
RDS(ON) < 15m(VGS = 4.5V)
RDS(ON) < 20m(VGS = 2.5V)
RDS(ON) < 28m(VGS = 1.8V)
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
8
6.3
30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO8808
AO8808
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=3A
Forward Transconductance
VDS=5V, ID=8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=8A
VGS=10V, VDS=10V, RL=1.3,
RGEN=3
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Min
20
0.5
30
Typ
0.75
10.6
14.2
12.2
16.1
23.2
36
0.73
1810
232
200
1.6
19.8
1.8
5
3.3
5.9
44
7.7
22
9.8
Max Units
V
10
25
µA
100 nA
1V
A
14
17
m
15 m
20 m
28 m
S
1V
2.4 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





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