Effect Transistor. AO8808A Datasheet

AO8808A Transistor. Datasheet pdf. Equivalent

Part AO8808A
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature www.DataSheet4U.com AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor General Descrip.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8808A Datasheet



AO8808A
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AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
Features
VDS (V) = 20V
ID = 7.9A (VGS = 10V)
RDS(ON) < 14m(VGS = 10V)
RDS(ON) < 15m(VGS = 4.5V)
RDS(ON) < 20m(VGS = 2.5V)
RDS(ON) < 28m(VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
7.9
6.3
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO8808A
AO8808A
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=3A
Forward Transconductance
VDS=5V, ID=8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=8A
VGS=10V, VDS=10V, RL=1.2,
RGEN=3
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Min
20
±12
0.5
30
Typ
0.75
10.6
14.2
11.7
15.2
21.5
36
0.6
1810
232
200
1.6
17.9
1.5
4.7
2.5
7.2
49
10.8
20.2
8
Max Units
V
10
25
µA
10 µA
V
1V
A
14
18
m
15 m
20 m
28 m
S
1V
2.4 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.







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