AO8810

AO8810 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. VDS ID (at VGS=4.5V) RDS(ON) (at VGS= 4.5V) RDS(ON) (at VGS = 4.0V) RDS(ON) (at VGS = 3.1V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) ESD protected 20V 7A < 20mΩ < 20.5mΩ < 21.5mΩ < 23mΩ < 28mΩ TSSOP8 Top View Bottom View Pin 1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 D1/D2 7 S2 6 S2 5 G2 D1 G1 1.8KΩ G2 1.8KΩ S1 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 ...