Effect Transistor. AO8814 Datasheet

AO8814 Transistor. Datasheet pdf. Equivalent

Part AO8814
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Feature AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Fe.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8814 Datasheet




AO8814
AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
VDS (V) = 20V
ID = 7.5 A (VGS = 10V)
RDS(ON) < 16m(VGS = 10V)
RDS(ON) < 18m(VGS = 4.5V)
RDS(ON) < 20m(VGS = 3.6V)
RDS(ON) < 24m(VGS = 2.5V)
RDS(ON) < 34m(VGS = 1.8V)
ESD Rating: 2500V HBM
TSSOP-8
Top View
D1
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
7.5
6
30
1.5
0.96
-55 to 150
D2
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO8814
AO8814
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.5A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
VGS=3.6V, ID=6A
VGS=2.5V, ID=6A
VGS=1.8V, ID=5A
Forward Transconductance
VDS=5V, ID=7.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=7.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=7.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
Min
20
±12
0.5
30
10
14
11.5
13
15
20
Typ
0.71
13
18
15
16.8
19
26
30
0.74
1390
190
150
1.5
15.4
1.4
4
6.2
11
40.5
10
15
5.1
Max
1
5
10
1
16
22
18
20
24
34
1
2.5
Units
V
µA
µA
V
V
A
m
m
m
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 5: Feb 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.







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