N-Channel MOSFET. AO8820 Datasheet

AO8820 MOSFET. Datasheet pdf. Equivalent

Part AO8820
Description 20V Common-Drain Dual N-Channel MOSFET
Feature AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8820 uses.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8820 Datasheet




AO8820
AO8820
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8820 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. It is ESD protected. This device is suitable for use
as a uni-directional or bi-directional load switch, facilitated
by its common-drain configuration.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=3.6V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
ESD protected!
20V
7A
< 21m
< 24m
< 28m
< 32m
< 50m
TSSOP8
Top View
Bottom View
Pin 1
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
7
5.5
30
1.5
0.96
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
Units
83 °C/W
120 °C/W
70 °C/W
Rev 7: April. 2012
www.aosmd.com
Page 1 of 5



AO8820
AO8820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±10V
10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 0.8 1.1
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
VGS=10V, ID=7A
13 17.2 21
TJ=125°C
24 29
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6.6A
VGS=3.6V, ID=6A
15 19.4 24
m
16 20.7 28
VGS=2.5V, ID=5.5A
18 25 32
VGS=1.8V, ID=2A
35 50
gFS Forward Transconductance
VDS=5V, ID=7A
25 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.65 1
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
500 pF
100 pF
52 pF
SWITCHING PARAMETERS
Qg Total Gate Charge
6 9 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=7A
2 nC
Qgd Gate Drain Charge
1 nC
tD(on)
Turn-On DelayTime
0.2 us
tr Turn-On Rise Time
VGS=5V, VDS=10V, RL=1.4,
1.5 us
tD(off)
Turn-Off DelayTime
RGEN=3
7.4 us
tf Turn-Off Fall Time
18 us
trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs
9 ns
Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
10 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: April. 2012
www.aosmd.com
Page 2 of 5







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