Effect Transistor. AO8832 Datasheet

AO8832 Transistor. Datasheet pdf. Equivalent

Part AO8832
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Feature www.DataSheet4U.com AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Gen.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8832 Datasheet



AO8832
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AO8832
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8832 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8832 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 28m(VGS = 4.5V)
RDS(ON) < 31m(VGS = 3.6V)
RDS(ON) < 39m(VGS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
D1
1.6K
S1
Maximum
30
±12
7
5.5
30
1.5
0.96
-55 to 150
G2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
67
110
62
Max
85
130
75
D2
1.6K
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO8832
AO8832
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=3.6V, ID=5A
VGS=2.5V, ID=4A
Forward Transconductance
VDS=5V, ID=7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=7A
VGS=4.5V, VDS=15V, RL=2.2,
RGEN=3
IF=7A, dI/dt=100A/µs, VGS=-9V
IF=7A, dI/dt=100A/µs, VGS=-9V
Min
30
±12
0.6
30
Typ
0.78
20
28
23
24.7
31
25
0.67
330
80
10
1.6
6.4
3.1
2.5
388
992
2.7
1.9
16.6
7
Max Units
V
1
5
µA
10 µA
V
1.5 V
A
24
28 m
31
39
S
1V
2.5 A
pF
pF
pF
k
nC
nC
nC
ns
ns
µs
µs
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.







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