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AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The...
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AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ
D1
D2
G2
1.8KΩ
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Steady State
20 ±8 5.7 4.8 25 1.0 0.7
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
7 5.7 1.5 1.0 -55 to 150
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol
A A
t ≤ 10s Steady State Steady State
RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8846
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Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS ...