EIC1213-12

www.DataSheet4U.com EIC1213-12 ISSUED 3-19-09 12.75-13.25 GHz 12-Watt Internally Matched Power FET Excelics EIC1213-12 .827±.010 .669 .120 MIN FEATURES 12.75– 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 3700mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 3700mA Gain Flatness f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈3700mA Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.25 GHz Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3700mA f = 12.75-13.25GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 40.5 5 TYP 41 6 MAX UNITS dBm dB ±0.6 -41 -45 25 3800 8 -2.5 1.8 4300 10 -4.0 2.1 o dB dBc % mA A V C/W f = 12.75-13.25GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 75 mA Note: 1) Tested with 30 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting. MAXIMUM RATING AT ...