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D2111 Dataheets PDF



Part Number D2111
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SD2111
Datasheet D2111 DatasheetD2111 Datasheet (PDF)

www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet4U.com 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E.

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www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet4U.com 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID * 1 1 Rating 120 120 7 3 6 2 25 150 –55 to +150 3 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1.5 A* IC = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A* 1 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD IC = 1.5 A, IB = 3 mA* 1 1 IC = 1.5 A, IB = 3 mA* 1 1 See switching characteristic curve of 2SD1605. 2 www.DataSheet4U.com 2SD2111 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 0 50 100 Case temperature TC (°C) Area of Safe Operation 150 10 Collector current IC (A) 3 1.0 0.3 Ta = 25°C 0.1 1 Shot Pulse 0.03 0.01 0.3 iC (peak) IC (max) DC Op era 1.0 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 5 TC = 25°C 5 4 2.5 2 1.5 Collector current IC (A) 4 1 3 3 0.5 mA 2 1 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE 5,000 VCE = 3 V 2,000 1,000 500 °C 75 = T C 25°C C 5° –2 200 100 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 100 µs 10 1µ s s s 1m 0m =1 5°C ) PW tion (T C =2 3 www.DataSheet4U.com 2SD2111 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 5 200 2 1.0 lC/lB = 200 0.5 VCE (sat) TC = 25°C 0.2 0.1 0.1 VBE (sat) 500 0.2 0.5 1.0 2 5 Collector current IC (A) 10 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) 4 www.DataSheet4U.com 2SD2111 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi.


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