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2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3
12 3
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2SD2111
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID *
1 1
Rating 120 120 7 3 6 2 25 150 –55 to +150 3
Unit V V V A A W
°C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1.5 A* IC = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A*
1 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
IC = 1.5 A, IB = 3 mA*
1
1
IC = 1.5 A, IB = 3 mA*
1
1
See switching characteristic curve of 2SD1605.
2
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2SD2111
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W)
20
10
0
50 100 Case temperature TC (°C) Area of Safe Operation
150
10 Collector current IC (A) 3 1.0 0.3 Ta = 25°C 0.1 1 Shot Pulse 0.03 0.01 0.3 iC (peak)
IC (max)
DC Op era
1.0 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics
5
TC = 25°C 5 4
2.5
2 1.5
Collector current IC (A)
4
1 3 3 0.5 mA 2
1 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
10,000 DC current transfer ratio hFE 5,000
VCE = 3 V
2,000 1,000 500
°C 75 = T C 25°C C 5° –2
200 100 0.1
0.2
0.5 1.0 2 5 Collector current IC (A)
100 µs 10
1µ s
s s 1m 0m =1
5°C )
PW
tion (T C =2
3
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2SD2111
Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 5 200 2 1.0 lC/lB = 200 0.5 VCE (sat) TC = 25°C 0.2 0.1 0.1 VBE (sat) 500
0.2
0.5 1.0 2 5 Collector current IC (A)
10
Transient Thermal Resistance Thermal resistance θj-c (°C/W)
10
3 TC = 25°C 1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
4
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2SD2111
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