STS25N3LLH6

www.DataSheet4U.com STS25N3LLH6 N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Preliminary Data Features Type STS25N3LLH6 ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.0032 Ω ID 22 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application ■ Switching applications Figure 1. Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. O bs t e l o r P e u d o ) s ( ct o s b O - e t le Internal schematic diagram o r P c u d ) s t( Device summary Marking 25G3L Packag SO-8 Packaging Tape and reel Order code STS25N3LLH6 January 2009 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STS25N3LLH6 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ............................................... 6 Package mechanical ...