STS30N3LLH6

www.DataSheet4U.com STS30N3LLH6 N-channel 30 V, 0.0016 Ω, 30 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type STS30N3LLH6 ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.0024 Ω ID 30 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. Device summary Marking 30G3L Packag SO-8 Packaging Tape and reel Order code STS30N3LLH6 July 2009 Doc ID 15346 Rev 2 1/13 www.st.com 13 www.DataSheet4U.com Contents STS30N3LLH6 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...