STB140N10F4

www.DataSheet4U.com STB140N10F4, STF140N10F4 STP140N10F4 N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET Preliminary Data Features Type STB140N10F4 STF140N10F4 STP140N10F4 ■ ■ ■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested 3 1 Application ■ D²PAK Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Marking 140N10F4 140N10F4 140N10F4 Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STB140N10F4 STF140N10F4 STP140N10F4 January 2009 Rev 1 1/13 www.st.com 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STB140N10F4, STF140N10F4, STP140N10F4 Contents 1 2 3 4 5 6 Electrical ratings . . . . . ....