KDS3512

www.DataSheet4U.com SMD Type 80V N-Channel PowerTrench MOSFET KDS3512 IC IC Features 4.0 A, 80 V. RDS(ON) = 70m RDS(ON) = 80m @ VGS = 10 V @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation Power dissipation Power dissipation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG R R JA JC Symbol VDSS VGS ID Rating 80 20 4 30 2.5 Unit V V A A PD 1.2 1 -55 to 175 50 25 W Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) /W /W www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KDS3512 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol W DSS IAR BVDSS Testconditons VDD = 40 V, ID = 4.0A (Not 2) ( Not 2) VGS = 0 V, ID = 250 ID = 250 A 80 80 1 100 -100 2 2.4 -6 50 55 91 20 14 634 VDS = 40 V, VGS = 0 V,f = 1.0 MHz 58 28 7 VDD = 40 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) 3 24 4 13 VDS = 40 V, ID = 4...