KDS3912

www.DataSheet4U.com SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3912 IC IC Features 3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = 10 V @ VGS = 6 V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Case (Note 1) Thermal Resistance Junction to Ambient (Note 1a) TJ, TSTG R R JC JA Symbol VDSS VGS ID PD Rating 100 20 3 20 1.6 1 Unit V V A A W PD 0.9 0.9 -55 to 175 40 78 W /W /W www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KDS3912 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol W DSS IAR BVDSS Testconditons Single Pulse,VDD=50V,ID=3A(Not 2) ( Not 2) VGS = 0 V, ID = 250 ID = 250 A 100 108 10 100 -100 2 2.5 -6 92 98 175 10 11 63...