DatasheetsPDF.com

BUK964R4-40B Dataheets PDF



Part Number BUK964R4-40B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description TrenchMOS logic level FET
Datasheet BUK964R4-40B DatasheetBUK964R4-40B Datasheet (PDF)

www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power sw.

  BUK964R4-40B   BUK964R4-40B


Document
www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.9 mΩ (typ) s Ptot ≤ 254 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 1 MBK106 Simplified outline [1] Symbol mb mb d mb g s MBB076 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT226 (I2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name BUK954R4-40B BUK964R4-40B BUK9E4R4-40B TO-220AB D2-PAK I2-PAK Description Plastic single-ended heat-sink mounted package Plastic single-ended surface mounted package Plastic single-ended low-profile package Version SOT78 SOT404 SOT226 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min −55 −55 - Max 40 40 ±15 174 75 75 697 254 +175 +175 174 75 697 961 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by package. 9397 750 12051 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 — 13 October 2003 2 of 16 Philips Semiconductors www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET 120 Pder (%) 03na19 200 ID (A) 150 03nl57 80 100 40 Capped at 75 A due to package 50 0 0 50 100 150 200 Tmb (° C) 0 0 50 100 150 200 Tmb (°C) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 Limit RDSon = VDS/ID 03nl58 ID (A) tp = 10 µ s 102 100 µ s Capped at 75 A due to package 1 ms 10 ms 10 DC 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 12051 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 — 13 October 2003 3 of 16 Philips Semiconductors www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Min Typ Max Unit 0.59 K/W thermal resistance from junction to mounting Figure 4 base thermal resistance from junction to ambient SOT78 (TO-220AB) SOT226 (I2-PAK) SOT404 (D2-PAK) vertical in still air vertical in still air minimum footprint; mounted on a PCB 60 60 50 K/W K/W K/W Symbol Parameter 5.1 Transient thermal impedance 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 P 03nl59 δ= tp T single shot tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 t Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12051 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 — 13 October 2003 4 of 16 Philips Semiconductors www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = .


BUK954R2-55B BUK964R4-40B BUK954R4-40B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)