ST5NK60Z. 5NK60Z Datasheet

5NK60Z ST5NK60Z. Datasheet pdf. Equivalent

Part 5NK60Z
Description ST5NK60Z
Feature www.DataSheet4U.com STP5NK60Z - STP5NK60ZFP STD5NK60Z N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DP.
Manufacture ST Microelectronics
Datasheet
Download 5NK60Z Datasheet

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5NK60Z
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STP5NK60Z - STP5NK60ZFP
STD5NK60Z
N-CHANNEL 600V - 1.2- 5A TO-220/TO-220FP/DPAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP5NK60Z
STP5NK60ZFP
STD5NK60Z
600 V < 1.6 5 A 90 W
600 V < 1.6 5 A 25 W
600 V < 1.6 5 A 90 W
s TYPICAL RDS(on) = 1.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP5NK60Z
P5NK60Z
STP5NK60ZFP
P5NK60ZFP
STD5NK60ZT4
D5NK60
October 2003
PACKAGE
TO-220
TO-220FP
DPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
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5NK60Z
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STP5NK60Z - STP5NK60ZFP - STD5NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 5A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
STP5NK60Z
STD5NK60Z
STP5NK60ZFP
600
600
± 30
5 5 (*)
3.16 3.16 (*)
20 20 (*)
90 25
0.72 0.2
3000
4.5
- 2500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
TO-220
DPAK
TO-220FP
1.39 5
62.5 100
300
°C/W
°C/W
°C
Max Value
5
220
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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