UPG2156TB SPDT SWITCH Datasheet

UPG2156TB Datasheet, PDF, Equivalent


Part Number

UPG2156TB

Description

L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH

Manufacture

NEC

Total Page 8 Pages
Datasheet
Download UPG2156TB Datasheet


UPG2156TB
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2156TB
L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or
cordless telephone application. The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and
high linearity.
FEATURES
• Low insertion loss
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1
: LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2
• High power switching
: Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1/2
• 6-pin super minimold package (2.1 × 2.0 × 0.9 mm)
APPLICATION
• GSM Triple/Quad band digital cellular
ORDERING INFORMATION
Part Number
µPG2156TB-E4
Order Number
Package
µPG2156TB-E4-A 6-pin super minimold
(Pb-Free)
Marking
Supplying Form
G4V
Embossed tape 8 mm wide
Pin 4, 5, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2156TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10588EJ01V0DS (1st edition)
Date Published December 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005

UPG2156TB
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PIN CONNECTIONS
(Top View)
(Bottom View)
1 66 1
2 55 2
3 44 3
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Supply Voltage
Control Voltage
Input Power
Operating Ambient Temperature
Storage Temperature
Symbol
VDD
Vcont
Pin
TA
Tstg
Ratings
+8.0
+8.0
+38
45 to +85
55 to +150
Unit
V
V
dBm
°C
°C
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Supply Voltage
Control Voltage (High)
Control Voltage (Low)
Symbol
VDD
Vcont (H)
Vcont (L)
MIN.
+2.4
+2.4
0
TYP.
+2.6
+2.6
0
MAX.
+5.0
+5.0
+0.2
Unit
V
V
V
µPG2156TB
Pin No.
1
2
3
4
5
6
Pin Name
OUT2
GND
OUT1
VDD
IN
Vcont
2 Data Sheet PG10588EJ01V0DS


Features DATA SHEET www.DataSheet4U.com GaAs INT EGRATED CIRCUIT µPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH DESCRIPTION The µPG2156TB is an L-band single control SPDT GaAs FET switch wh ich was developed for digital cellular or cordless telephone application. The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and high linearity. FEATURES • Low inser tion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : L INS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V , f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz , IN-OUT1/2 • High power switching : Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2 .6 V/0 V, f = 1.0 GHz, IN-OUT1/2 • 6- pin super minimold package (2.1 × 2.0 × 0.9 mm) APPLICATION • GSM Triple/ Quad band digital cellular ORDERING IN FORMATION Part Number Order Number Pack age Marking G4V Supplying Form • Embo ssed tape 8 mm wide • Pin 4, 5, 6 fac e the perforation side of the tape • Qty 3 kpcs/reel µPG2156TB-E4 µPG2156TB-E.
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