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NDD04N60Z Dataheets PDF



Part Number NDD04N60Z
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NDD04N60Z DatasheetNDD04N60Z Datasheet (PDF)

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W •FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 4.8 4.1 A Continuous Drain Current RqJC, TA = 100°C (Note 1) ID 3.0 2.6 A Pulsed Drain Cur.

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NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W •FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 4.8 4.1 A Continuous Drain Current RqJC, TA = 100°C (Note 1) ID 3.0 2.6 A Pulsed Drain Current, IDM VGS @ 10V Power Dissipation RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, ID = 4.0 EAS A 20 20 A 30 83 W ±30 V 120 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage VISO 4500 − V (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering TL Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C www.onsemi.com VDSS (@ TJmax) 650 V RDS(on) (MAX) @ 2 A 2.0 Ω N−Channel D (2) G (1) S (3) 1 2 3 NDF04N60ZG, NDF04N60ZH TO−220FP CASE 221AH 4 4 1 23 NDD04N60Z−1G IPAK CASE 369D 12 3 NDD04N60ZT4G DPAK CASE 369AA ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 1 May, 2017 − Rev. 10 Publication Order Number: NDF04N60Z/D NDF04N60Z, NDD04N60Z THERMAL RESISTANCE Junction−to−Case (Drain) Parameter NDF04N60Z NDD04N60Z Symbol RqJC Value 4.2 1.5 Unit °C/W Junction−to−Ambient Steady State (Note 3) NDF04N60Z RqJA 50 (Note 4) NDD04N60Z 38 (Note 3) NDD04N60Z−1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Reference to 25°C, ID = 1 mA BVDSS 600 DBVDSS/ 0.6 DTJ V V/°C Drain−to−Source Leakage Current VDS = 600 V, VGS = 0 V 25°C 150°C IDSS 1 mA 50 Gate−to−Source Forward Leakage VGS = ±20 V IGSS ±10 mA ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance VGS = 10 V, ID = 2.0 A RDS(on) 1.8 2.0 W Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Output Capacitance (Note 6) Reverse Transfer Capacitance (Note 6) VDS = VGS, ID = 50 mA VDS = 15 V, ID = 2.0 A VDS = 25 V, .


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