Document
NDF04N60Z, NDD04N60Z
Power MOSFET, N-Channel,
600 V, 2.0 W
•FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current RqJC (Note 1)
ID
4.8 4.1 A
Continuous Drain Current RqJC, TA = 100°C (Note 1)
ID
3.0 2.6 A
Pulsed Drain Current,
IDM
VGS @ 10V
Power Dissipation RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche Energy, ID = 4.0 EAS A
20
20
A
30
83 W
±30
V
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage
VISO
4500
−
V
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 15)
Peak Diode Recovery (Note 2)
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body Diode)
IS
4.0
A
Maximum Temperature for Soldering
TL
Leads
260
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature 2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS (@ TJmax) 650 V
RDS(on) (MAX) @ 2 A 2.0 Ω
N−Channel D (2)
G (1)
S (3)
1 2 3
NDF04N60ZG, NDF04N60ZH
TO−220FP CASE 221AH
4
4
1 23
NDD04N60Z−1G IPAK
CASE 369D
12 3
NDD04N60ZT4G DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
May, 2017 − Rev. 10
Publication Order Number: NDF04N60Z/D
NDF04N60Z, NDD04N60Z
THERMAL RESISTANCE Junction−to−Case (Drain)
Parameter
NDF04N60Z NDD04N60Z
Symbol RqJC
Value
4.2 1.5
Unit °C/W
Junction−to−Ambient Steady State
(Note 3) NDF04N60Z
RqJA
50
(Note 4) NDD04N60Z
38
(Note 3) NDD04N60Z−1
80
3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 1 mA
Reference to 25°C, ID = 1 mA
BVDSS
600
DBVDSS/
0.6
DTJ
V V/°C
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
25°C 150°C
IDSS
1
mA
50
Gate−to−Source Forward Leakage
VGS = ±20 V
IGSS
±10
mA
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source On−Resistance
VGS = 10 V, ID = 2.0 A
RDS(on)
1.8
2.0
W
Gate Threshold Voltage Forward Transconductance
DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Output Capacitance (Note 6) Reverse Transfer Capacitance (Note 6)
VDS = VGS, ID = 50 mA VDS = 15 V, ID = 2.0 A
VDS = 25 V, .