NTD4906N

NTD4906N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain (CNuortreen1t)(RqJA) TA = 25°C TA = 100°C VDSS VGS ID 30 "20 14 9.9 V V A Power Dissipation (RqJA) (Note 1) Continuous Drain Current 2) (RqJA) (Note Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) TA = 25°C Steady State TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 100°C PD ID PD ID 2.6 W 10.3 A 7.3 1.38 W 54 A 38 Power Dissipation (RqJC) (Note 1) TC = 25°C Pulsed Drain Current tp=10ms TA = 25°C Current Limited by Package TA = 25°C Operating Junction and Storage Temperature PD IDM IDmaxPkg TJ, Tstg 37.5 223 90 −55 to 175 W A A °C Source Current (Body Diode) Drain to Source dV/dt IS dV/dt 32 A 6.5 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, IL(pk) = 31 A, RG = 25 W) EAS 48 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Reco...