NTD4909N

www.DataSheet4U.com NTD4909N Power MOSFET Features 30 V, 41 A, Single N−Channel, DPAK/IPAK Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com RDS(on) MAX 8.0 mW @ 10 V 12 mW @ 4.5 V D ID MAX 41 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TA = 25°C TA = 100°C TA = 25°C TA = 25°C Steady State TA = 100°C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 "20 12.1 8.6 2.6 8.8 6.2 1.37 41 29 29.4 167 60 − 55 to 175 27 7.0 28 W A A °C A V/ns mJ W A W A Unit V V A G S 4 4 1 2 1 N−Channel 4 3 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 CASE 369AD CASE 369D IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 49 09NG 4 Drain YWW 49 09NG 4 Drain Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50...