NTD4913N

www.DataSheet4U.com NTD4913N Power MOSFET Features 30 V, 32 A, Single N−Channel, DPAK/IPAK Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 10.5 mW @ 10 V 15 mW @ 4.5 V D ID MAX 32 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 10.5 7.4 2.5 7.7 5.4 1.36 32 23 24 132 60 −55 to +175 20 8.0 22 W A A °C A V/ns mJ W A W A Unit V V A G S N−CHANNEL MOSFET 4 4 1 2 1 4 3 CASE 369AA DPAK (Bent Lead) STYLE 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 1 2 Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 49 13NG 4 Drain YWW 49 13NG 4 Drain YWW 49 13NG Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, ...