K5L5628JTM

www.DataSheet4U.com K5L5628JT(B)M Document Title Multi-Chip Package MEMORY Preliminary Preliminary MCP MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History 0.0 Initial Draft (256M NOR Flash A-die_rev0.3) (128M UtRAM M-die_rev0.1) Finalize ....... rev 1.0 - Deleted Synchronous Burst Read and Asynchronous Write Mode Draft Date August 12, 2004 Remark Preliminary 1.0 November 10, 2004 Final Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 Revision 1.0 November 2004 www.DataSheet4U.com K5L5628JT(B)M Multi-Chip Package MEMORY Preliminary Preliminary MCP MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM FEATURES Operating Temperature : -30°C ~ 85°C Package : 115Ball FBGA Type - 8.0mm x 12.0mm 0.8mm ball pitch 1.4mm (Max.) Thickness Single Voltage, 1.7V to 1.95V for Read and Write operations Organization - 16,772,216 x 16 bit ( Word Mode O...