HEXFET Power MOSFET
www.DataSheet4U.com
PD- 94948
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Recti...
Description
www.DataSheet4U.com
PD- 94948
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free
l
IRF3711PbF IRF3711SPbF IRF3711LPbF
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
6.0mΩ
ID
110A
Benefits l Ultra-Low Gate Impedance
l l Very Low RDS(on) at 4.5V VGS
TO-220AB IRF3711PbF
D2Pak IRF3711SPbF
TO-262 IRF3711LPbF
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
Fully Characterized Avalanche Voltage and Current
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 110 69 440 120 3.1 0.96 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
1.04 ––– 62 40
Units
°C/W
Notes through are on page 11
www.irf.com
1
2/27/04
www.DataSheet4U.com
IRF3711/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Vol...
Similar Datasheet