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ST 2SC945
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The...
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ST 2SC945
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications. The
transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the
PNP transistor ST 2SA733 is recommended. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
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ST 2SC945
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 μA ICBO 0.1 μA V(BR)EBO 5 V V(BR)CEO 50 V V(B...