BTC2411N3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High IC(Max), IC(Max) = 0.6A. Low VCE(sat) , Typ. VCE(sat) = 0.4V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. Complementary to BTA1036N3. Pb-free package Symbol BTC2411N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition BTC2411N3 CYStek Product Specification Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 75 40 6 0.6 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V A mW mW °C/W °C/W °C °C www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 75 40 6 0.75 35 50 75 82 40 300 Typ. 6 Max. 10 10 10 0.5 0.4 0.75 0.95 1.2 390 Unit V V V nA nA nA V V V V V Test Conditi...