UPA1793

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR µ PA1793 SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The µPA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. PACKAGE DRAWING (Unit: mm) 8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 P-Channel 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 FEATURES Low on-state resistance N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) 1.44 RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A) P-Channel RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A) RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A) Low input capacitance N-Channel Ciss = 160 pF TYP. P-Channel Ciss = 370 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8 RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 EQUIVALENT CIRCUIT ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Gate Body Diode Gate Body Diode Drain Drain µPA1793G Gate Protection Diode Source Gate Protection Diode Source N-Channel P-Channel Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information i...