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H11D4 Dataheets PDF



Part Number H11D4
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Optocoupler
Datasheet H11D4 DatasheetH11D4 Datasheet (PDF)

H11D1/H11D2/H11D3/H11D4 www.DataSheet4U.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A C NC 1 2 3 6 B 5 C 4 E • Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V • Isolation test voltage: 5300 VRMS • Low coupling capacitance • High common mode transient immunity • Packa.

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H11D1/H11D2/H11D3/H11D4 www.DataSheet4U.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A C NC 1 2 3 6 B 5 C 4 E • Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V • Isolation test voltage: 5300 VRMS • Low coupling capacitance • High common mode transient immunity • Package with base connection • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179004 i179004 DESCRIPTION The H11D1/H11D2/H11D3/H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1/H11D2 are identical and the H11D3/H11D4 are identical. AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending available with option 1 • BSI IEC60950 IEC60065 • FIMKO APPLICATIONS • Telecommunications • Replace relays ORDER INFORMATION PART H11D1 H11D2 H11D3 H11D4 H11D1-X007 H11D1-X009 H11D2-X007 H11D3-X007 Note For additional information on the available options refer to option information. REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 7) Document Number: 83611 Rev. 1.5, 19-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 H11D1/H11D2/H11D3/H11D4 www.DataSheet4U.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage DC forward current Surge forward current Power dissipation OUTPUT H11D1 Collector emitter voltage H11D2 H11D3 H11D4 H11D1 Collector base voltage H11D2 H11D3 H11D4 Emitter base voltage Collector current Power dissipation COUPLER Isolation test voltage Insulation thickness between emitter and detector Creepage distance Clearance distance Comparative tracking index Isolation resistance Storage temperature range Operating temperature range Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm per DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C RIO RIO Tstg Tamb Tj Tsld between emitter and detector, refer to climate DIN 50014, part 2, Nov. 74 VISO 5300 ≥ 0.4 ≥7 ≥7 175 ≥ 1012 ≥ 1011 - 55 to + 150 - 55 to + 100 100 260 Ω Ω °C °C °C °C VRMS mm mm mm VCE VCE VCE VCE VCBO VCBO VCBO VCBO VBEO IC Pdiss 300 300 200 200 300 300 200 200 7 100 300 V V V V V V V V V mA mW t ≤ 10 µs VR IF IFSM Pdiss 6 60 2.5 100 V mA A mW TEST CONDITION PART SYMBOL VALUE UNIT Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83611 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 www.DataSheet4U.com Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage ELECTRICAL CHARACTERISTCS PARAMETER INPUT Forward voltage Reverse voltage Reverse current Capacitance Thermal resistance OUTPUT H11D1 Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 MΩ H11D2 H11D3 H11D4 Emitter base breakdown voltage Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Coupling capacitance Current transfer ratio Collector emitter, saturation voltage IF = 10 mA, VCE = 10 V, RBE = 1 MΩ IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ VCE = 200 V, RBE = 1 MΩ Collector emitter, leakage current VCE = 300 V, RBE = 1 MΩ, Tamb = 100 °C H11D1 H11D2 H11D1 H11D2 CC IC/IF VCEsat ICER ICER ICER ICER 20 0.25 0.4 100 100 250 250 0.6 pF % V nA nA µA µA IEB = 100 µA VCE = 10 V, f = 1 MHz VCB = 10 V, f = 1 MHz VEB = 5 V, f = 1 MHz BVCER BVCER BVCER BVCER BVEBO CCE CCB CEB Rth 300 300 200 200 7 7 8 38 250 V V V V V pF pF pF K/W IF = 10 mA IR = 10 µA VR = 6 V VR = 0 V, f = 1 MHz VF VR IR CO RthJA 6 0.01 25 750 10 1.1 1.5 V V µA pF K/W TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION IF = 10 mA, VCE = 10 V, RBE = 1 MΩ PART SYMBO.


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