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PHOTOTRANSISTOR OUTPUT. H11D4x Datasheet

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PHOTOTRANSISTOR OUTPUT. H11D4x Datasheet
















H11D4x OUTPUT. Datasheet pdf. Equivalent













Part

H11D4x

Description

HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT



Feature


www.DataSheet4U.com H11D1X, H11D2X, H11 D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATO R PHOTOTRANSISTOR OUTPUT 'X' SPECIFICA TIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD appr oved to CECC 00802 1.2 Dimensions in m m 2.54 7.0 6.0 1 2 3 6 5 4 DESCRIPTION The H11D series of optically coupled i solators consist o.
Manufacture

ISOCOM COMPONENTS

Datasheet
Download H11D4x Datasheet


ISOCOM COMPONENTS H11D4x

H11D4x; f infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEA TURES z Options :10mm lead spread - add G after part no. Surface mount - add S M after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCER ( 30 0V - H11D1, H11D2 ) ( 200V - H11D3, H11 D4 ) z All electri.


ISOCOM COMPONENTS H11D4x

cal parameters 100% tested z Custom elec trical selections available APPLICATION S z DC motor controllers z Industrial s ystems controllers z Measuring instrume nts z Signal transmission between syste ms of different potentials and impedanc es 7.62 6.62 7.62 4.0 3.0 0.5 13° Ma x 0.26 3.0 0.5 3.35 ABSOLUTEMAXIMUMRA TINGS (25°C unless otherwise specified ) Storage Temperatur.


ISOCOM COMPONENTS H11D4x

e -55°C to + 150°C Operating Temperatu re -55°C to + 100°C Lead Soldering Te mperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipati on OUTPUT TRANSISTOR Collector-emitter Voltage BVCER H11D1, H11D2 H11D3, H11D4 Collector-base Voltage BVCBO H11D1, H1 1D2 H11D3, H11D4 Emitter-collector Volt age BVECO Collector Cur.





Part

H11D4x

Description

HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT



Feature


www.DataSheet4U.com H11D1X, H11D2X, H11 D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATO R PHOTOTRANSISTOR OUTPUT 'X' SPECIFICA TIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD appr oved to CECC 00802 1.2 Dimensions in m m 2.54 7.0 6.0 1 2 3 6 5 4 DESCRIPTION The H11D series of optically coupled i solators consist o.
Manufacture

ISOCOM COMPONENTS

Datasheet
Download H11D4x Datasheet




 H11D4x
H11D1X, H11D2X, H11D3X, H11D4X
www.DataSHhe1e1t4DU1.c,oHm 11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
'X' SPECIFICATIONAPPROVALS
z VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
Dimensions in mm
2.54
1
7.0
6.0 2
3
1.2
6
5
4
7.62
6.62 4.0
3.0
3.0
0.5
0.5
3.35
7.62
0.26
13°
Max
FEATURES
z Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
z High Isolation Voltage (5.3kVRMS ,7.5kVPK )
z High BVCER ( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
z All electrical parameters 100% tested
z Custom electrical selections available
APPLICATIONS
z DC motor controllers
z Industrial systems controllers
z Measuring instruments
z Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
OUTPUTTRANSISTOR
Collector-emitterVoltage BVCER
H11D1,H11D2
H11D3,H11D4
Collector-base Voltage BVCBO
H11D1,H11D2
H11D3,H11D4
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
(RBE= 1MΩ )
300V
200V
300V
200V
6V
100mA
150mW
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
POWERDISSIPATION
Total Power Dissipation
250mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel:(01429)863609 Fax:(01429)863581 e-mail
sales@isocom.co.uk http://www.isocom.com
14/8/08
DB91077




 H11D4x
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (VF)
1.2 1.5 V
Reverse Current (IR)
10 μA
Output
Collector-emitter Breakdown (BVCER )
H11D1, H11D2
H11D3, H11D4
Collector-base Breakdown (BV )
CBO
H11D1, H11D2
H11D3, H11D4
Emitter-collector Breakdown (BVECO )
Collector-emitter Dark Current (ICER )
H11D1, H11D2
300
200
300
200
6
V
V
V
V
V
100 nA
250 μA
H11D3, H11D4
100 nA
250 μA
TEST CONDITION
IF = 10mA
VR =6V
IC = 1mA, RBE = 1MΩ
( note 2 )
IC = 100μA
IE = 100μA
V = 200V,R =1MΩ
CE BE
VCE= 200V,RBE=1MΩ,
TA=100°C
V = 100V,R =1MΩ
CE BE
VCE= 100V,RBE=1MΩ,
TA=100°C
Coupled Current Transfer Ratio (CTR)
20
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance R
ISO
Turn-on Time
ton
Turn-off Time
toff
5300
7500
5x1010
5
5
%
0.4 V
VRMS
VPK
Ω
μs
μs
10mA IF , 10V VCE ,
R = 1MΩ
BE
10mA I , 0.5mA I ,
FC
RBE = 1MΩ
See note 1
See note 1
V = 500V (note 1)
IO
VCC = 10V, IC= 2mA,
RL = 100Ω , fig 1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
RL = 100Ω
Input
ton
Output
tr
Output
10%
90%
FIG 1
toff
tf
10%
90%
14/8/08
DB91077m-AAS/A3




 H11D4x
www.DataSheet4U.com
Collector Power Dissipation vs. Ambient Temperature
400
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA I )
F
10
300
200
100
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Voltage vs. Forward Current
1.4
1.3
T = -55°C
A
1.2
TA = +25°C
1.1
1.0
0.9 TA= +100°C
0.8
0.1 0.2 0.5 1 2
5 10 20 50
Forward current I (mA)
F
14/8/08
1.0
0.1
0.01
1
VRBCEE
=
=
10V
1MΩ
TA = 25°C
2 5 10 20
Forward current IF (mA)
50
Relative Current Transfer Ratio
vs. Ambient Temperature
2.4
2.2
2.0
1.8
Normalised to VCE = 10V ,
IF = 10mA , RBE = 1MΩ ,
TA = 25°C
1.6 IF = 20mA
1.4
1.2
1.0
I = 10mA
F
0.8
0.6
0.4 IF = 5mA
0.2
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-base Current vs.
Ambient Temperature
800
700 VCB= 10V
I = 50mA
600 F
500
400
300
V = 200V
CB
VCB= 10V
VCB= 10V
I = 10mA
F
IF = 10mA
IF = 5mA
200
100
0
-30
0 25 50 75 100
Ambient temperature TA ( °C )
DB91077m-AAS/A3




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