DatasheetsPDF.com

ESDA8V2-1J

ST Microelectronics

EOS and ESD Transil protection

ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.2 V ■ Unid...


ST Microelectronics

ESDA8V2-1J

File Download Download ESDA8V2-1J Datasheet


Description
ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W (8/20 µs waveform) ■ ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current (< 0.5 µA @ 5 V) Benefits ■ High EOS and ESD protection level ■ High integration ■ Suitable for high density boards Complies with the following standards: ■ IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge) ■ MIL STD 883G - Method 3015-7: class 3B – HBM (human body model): ≥8kV Applications This product is particularly recommended for the protection of power supply lines of portable devices, where EOS and ESD transient overvoltage protection in sensitive equipment is required, such as: ■ Computers ■ Printers ■ Communication systems ■ Cellular phone handsets and accessories ■ Video equipment A K SOD-323 Figure 1. Functional diagram (top view) Description The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 15646 Rev 1 1/7 www.st.com 7 Characteristics 1 Characteristics ESDA8V2-1J Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value ESD discharge: IEC 61000-4-2 air discharge on input pin...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)