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PBLS6023D Dataheets PDF



Part Number PBLS6023D
Manufacturers NXP
Logo NXP
Description 1.5 A PNP BISS Loadswitch
Datasheet PBLS6023D DatasheetPBLS6023D Datasheet (PDF)

www.DataSheet4U.com PBLS6023D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of c.

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www.DataSheet4U.com PBLS6023D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count AEC-Q101 qualified 1.3 Applications I I I I Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio single pulse; tp ≤ 1 ms IC = −1.5 A; IB = −100 mA open base [1] Conditions open base Min - Typ 110 Max −60 −1.5 −3 175 Unit V A A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1 [1] 7 0.8 10 1 50 100 13 1.2 V mA kΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. www.DataSheet4U.com NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description base TR1 input (base) TR2 output (collector) TR2 R2 Simplified outline 6 5 4 Graphic symbol 6 5 4 GND (emitter) TR2 collector TR1 emitter TR1 1 2 3 TR1 TR2 R1 1 2 3 006aab506 3. Ordering information Table 3. Ordering information Package Name PBLS6023D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. Marking codes Marking code KG Type number PBLS6023D PBLS6023D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 August 2009 2 of 16 www.DataSheet4U.com NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector single pulse; tp ≤ 1 ms Min - Max −60 −60 −5 −1.5 −3 −300 −1 370 480 630 50 50 10 +40 −10 100 100 200 Unit V V V A A mA A mW mW mW V V V V V mA mA mW TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Per device Ptot total power dissipation Tamb ≤ 25 °C [1] [2] [3] open emitter open base open collector output current peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1][2] [3] - −55 −65 480 590 760 150 +150 +150 mW mW mW °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6023D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 August 2009 3 of 16 www.DataSheet4U.com NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 1000 Ptot (mW) 800 (1) 006aab507 (2) 600 400 (3) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 6. Symbol Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] Thermal characteristics Parameter Conditions Min Typ Max 260 211 165 100 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6023D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 August 2009 4 of 16 www.DataSheet4U.com NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 103 Zth(j-a) (K/W) 102 δ=1 0.50 0.20 0.10 0.05 10 0.01 0 0.02 006aab508 0.75 0.33 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab509 103 Zth(j-a) (K/W) 102 δ=1 0.50 0.20 0.10 10 0.05 0..


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