MJD45H11T4-A

www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive application Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 TAB 2 Applications ■ ■ DPAK TO-252 Power amplifier Switching circuits Figure 1. Internal schematic diagram Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Marking MJD44H11 MJD45H11 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape and reel Order codes MJD44H11T4-A MJD45H11T4-A August 2009 Doc ID 16095 Rev 1 1/8 www.st.com 8 Absolute maximum ratings www.DataSheet4U.com MJD44H11T4-A, MJD45H11T4-A 1 Absolute maximum ratings Table 2. Symbol VCEO VEBO IC ICM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature Value 80 5 8 16 20 -55 to 150 150 Unit V V A A W °C °C Note: For PNP types voltage and current values are negative. Table 3. Symbol RthJC Thermal data Parameter Thermal resistance junction-case max Value 6.25 Unit °C/W 2/8 Doc ID 16095 Rev 1 MJD44H11T4-A, MJD45H11T4-A www.DataSheet4U.com Electrical characteristics 2 Elect...