N-Channel HEXFET Power MOSFET
PD - 97345C
IRF6717MPbF
IRF6717MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halgen Free l Low Profile (<0....
Description
PD - 97345C
IRF6717MPbF
IRF6717MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halgen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.95m@ 10V 1.6m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
46nC 14nC 6.6nC 31nC 35nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques l100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX MP
DirectFET ISOMETRIC
Description
The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6717MPbF balances both low resistance and low charge along with ultra low package...
Similar Datasheet