Document
www.DataSheet4U.com
IRF6713SPbF IRF6713STRPbF
Typical values (unless otherwise specified)
PD - 96129A
DirectFET Power MOSFET RDS(on) Qgs2
2.7nC
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested
VDSS Qg
tot
VGS Qgd
6.3nC
RDS(on) Qoss
14nC
25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V
Qrr
18nC
Vgs(th)
1.9V
21nC
SQ
MT MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX
Description
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6713SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6713SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
5
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
e e f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25 ±20 22 17 95 170 34 17
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 20 ID= 17A VDS= 20V VDS= 13V
A
mJ A
ID = 22A 4 3 2 1 2 4 6 8 10 12 14 16 T J = 125°C
T J = 25°C
30
VGS, Gate -to -Source Voltage (V)
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.23mH, RG = 25Ω, IAS = 17A.
www.irf.com
1
08/19/08
www.DataSheet4U.com
IRF6713SPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 52 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 19 2.2 3.5 1.9 -6.7 ––– ––– ––– ––– ––– 21 5.9 2.7 6.3 6.1 9.0 14 0.40 12 13 9.2 6.0 2880 710 340 ––– ––– 3.0 4.6 2.4 ––– 1.0 150 100 -100 ––– 32 ––– ––– ––– ––– ––– ––– 0.60 ––– ––– ––– ––– ––– ––– ––– pF nC
Ω
Conditions
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 22A VGS = 4.5V, ID = 17A V VDS = VGS, ID = 50µA
i i
mV/°C µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C nA S VGS = 20V VGS = -20V VDS = 13V, ID = 17A VDS = 13V VGS = 4.5V ID = 17A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ns ID = 17A RG = 1.8Ω See Fig. 17 VGS = 0V VDS = 13V ƒ = 1.0MHz
nC
Ãi
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
––– ––– ––– ––– –––
Typ. Max. Units
––– ––– 0.80 20 18 54 A 170 1.0 30 27 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n ju.