IRF6713STRPBF

www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 2.7nC l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested VDSS Qg tot VGS Qgd 6.3nC RDS(on) Qoss 14nC 25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V Qrr 18nC Vgs(th) 1.9V 21nC SQ MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX Description The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6713SPbF balances both low resistance a...