2SD1127

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA ICBO Collector Cutoff Current VCB= 120V; IE=0 hFE DC Current Gain IC= 10A; VCE= 2V Switching times ton Turn-On Time toff Turn-Off Time IC= 5A, IB1= IB2= 10mA 2SD1127 MIN TYP. MAX UNIT 120 V 7 V 1.5 V 2.0 V 100 μA 1000 0.8 μs 8.0 μs NOTICE： ISC reserves the rights to make changes of the con...