2SD1141

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1141 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1141 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IC= 30mA; L= 10mH, PW= 50μ VCEO(SUS) Collector-Emitter Sustaining Voltage s; 300 f= 50Hz V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 TYP. MAX UNIT V V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V ICEO Collector Cutoff Current VCE= 300V; RBE= ∞ 100 μA hFE DC Current Gain IC= 4A; VCE= 2V 500 Switching times ton Turn-on Time toff Turn-Off Time IC= 4A, IB1= IB2= 40mA ...