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2SD1170

Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid,motor and ...

Inchange Semiconductor

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