2SD1336

isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 hFE DC Current Gain IC= 5A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A, IB1= IB2= 12.5mA; VCC= 50V MIN TYP. MAX ...