2SD1378

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.7 A 1.2 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1378 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1378 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 3V fT Current-Gain—Bandwidth Product IE= 50mA; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz MIN TYP. MAX UNIT 80 V 80 V 5 V 0.4 V 0.5 μA 0.5 μA...