isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Sa...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
3.5
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1544
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V
COB
Output Capacitance
tf
Fall Time
IE= 0; VCB= 10V; ftest= 1.0MHz ICP= 3A, IB1(end)= 0.8A
2SD1544
MIN TYP. MAX UNIT
8.0
V
1.5
V
10 μA
1.0 mA
8
3
MHz
95
pF
0.5 1.0 μs
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