2SD1576

isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A ICM Collector Current-Peak 6 A IBM Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 2.5 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1576 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A 1.5 V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current hFE DC Current Gain IE= 1mA; IC= 0 VCB= 750V; IE= 0 VCB= 1300V; IE= 0 IC= 2A; VCE= 5V 6 V 50 μA 1.0 mA 2 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 0.5MHz 2 MHz Switching times tstg Storage Time tf Fall Time ...