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2SD1670

Power Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low speed high...

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