2SD1731

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 18 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 100 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1731 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A hFE DC Current Gain IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1300V; IE= 0 VECF C-E Diode Forward Voltage IF= 6A fT Transition Frequency IC= 1A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 5A; IB1= 1A; IB2= 2A, VCC= 200V 2SD1731 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 5 25 10 μA 1.0...