2SD1736

isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICP Collector Current-Peak 7 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A hFE DC Current Gain IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1300V; IE= 0 2SD1736 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 6 30 10 μA 1.0 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of o...