2SD1938

Transistors www.DataSheet4U.com 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features Low ON resistance Ron High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 20 25 300 500 200 150 −55 to +150 Unit V V V mA mA mW °C °C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 JEDEC: SOT-346 Mini3-G1 Package Marking symbol: 3W ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2 Symbol VCEO VBE ICBO IEBO hFE VCE(sat) fT Cob Ron Conditions IC = 1 mA, IB = 0 VCE = 2 V, IC = 4 mA VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA I...