Ultrahigh-Speed Switching Diode
Ordering number:EN1885C
LFB01, 01L
Silicon Planar Leadless Type
Ultrahigh-Speed Switching Diode
Features
· Highly reli...
Description
Ordering number:EN1885C
LFB01, 01L
Silicon Planar Leadless Type
Ultrahigh-Speed Switching Diode
Features
· Highly reliable leadless glass sleeve structure. · Very small size. · Capable of being suface-mounted. · Forward voltage : VF max=1.2V. · Interterminal capacitance : C max=3pF. · Reverse recovery time : trr max=4ns.
Package Dimensions
unit:mm 1137
[LFB01, 01L]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Curent Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VRM VR IFM IO IFSM P
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage Reverse Current
Interterminal Capacitance Reverse Recovery Time
VF IR1 IR2 C
trr
Reverse Recovery Time (trr) Test Circuit
IF=100mA VR=30V At each VR
VR=0V, f=1MHz VR=6V, IF=10mA, RL=50Ω
C:Cathode A:Anode
LFB01L
LFB01
55 90
50 80
→ 480
→ 150
→2
→ 300
→ +175
→ –65 to+ 175
Unit V V mA mA A
mW ˚C ˚C
Ratings min typ max
Unit
1.2 V
0.1 µA
0.5 µA
3 pF
4 ns
Unit (resistance :Ω, capacitance :F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/2239MO/D288MO/D025KI, TS No.1885-1/2
LFB01, 01L
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power con...
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